參數(shù)資料
型號: 2SD1409A
英文描述: Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
文件頁數(shù): 2/3頁
文件大?。?/td> 63K
代理商: 2SD1409A
2
Transistor
2SD1478, 2SD1478A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
0
200
160
40
120
80
0
240
200
160
120
80
40
Ambient temperature Ta (C)
C
C
0.1
Collector to emitter voltage V
CE
(V)
1
10
100
0.3
3
30
0.1
0.3
1
3
10
30
100
300
1000
Ta=25C
I
B
=50
μ
A
45
μ
A
40
μ
A
35
μ
A
5
μ
A
10
μ
A
15
μ
A
20
μ
A
25
μ
A
30
μ
A
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
25C
–25C
Ta=75C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
Ta=–25C
25C
75C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=10V
Ta=75C
25C
–25C
F
F
1
3
10
30
100
0
6
5
4
3
2
1
I
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
相關(guān)PDF資料
PDF描述
2SD1410 TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 6A I(C) | TO-220VAR
2SD1410A Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
2SD1411 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220VAR
2SD1411A Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
2SD1411AO TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1409A(F) 功能描述:達林頓晶體管 NPN 400V 6A Transistor RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2SD1410A(F) 制造商:Toshiba 功能描述:NPN 250V 6A 2000 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans Darlington NPN 250V 6A 3-Pin(3+Tab) TO-220NIS
2SD1410AF 制造商:Toshiba America Electronic Components 功能描述:POWER TRANSISTOR
2SD1411A-O(F) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220NIS
2SD1411A-Y(F) 制造商:Toshiba 功能描述:NPN 80V 7A 120 to 240 TO220NIS Bulk