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參數(shù)資料
| 型號： | 2SD1385 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN triple diffusion planer type(For low-frequency output amplification) |
| 中文描述： | 100 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SD1385 |
1
Transistor
2SD1385
Silicon NPN triple diffusion planer type
For low-frequency output amplification
I
Features
G
High collector to base voltage V
CBO
.
G
High collector to emitter voltage V
CEO
.
G
Large collector power dissipation P
C
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
400
400
5
200
100
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 100
μ
A, I
E
= 0
I
C
= 500
μ
A, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 5V, I
C
= 30mA
I
C
= 50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 30V, I
E
= –20mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
min
400
400
5
30
typ
40
max
1.5
1.5
7
Unit
V
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
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