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參數(shù)資料
| 型號(hào)： | 2SD1259 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 2SD1259 |
1
Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
I
Features
G
High foward current transfer ratio h
FE
G
Satisfactory linearity of foward current transfer ratio h
FE
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
100
60
80
6
6
3
1
40
1.3
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
2SD1259
2SD1259A
2SD1259
2SD1259A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CE
= 80V, I
E
= 0
V
CE
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
CB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
min
60
80
500
typ
50
max
100
100
100
100
2500
1
Unit
μ
A
μ
A
μ
A
V
V
MHz
2SD1259
2SD1259A
2SD1259
2SD1259A
*
h
FE
Rank classification
Rank
Q
P
O
h
FE
500 to 1000 800 to 1500 1200 to 2500
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Note: Ordering can be made by the common rank (PQ rank h
FE
= 500 to 1500) in the rank classification.
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PDF描述 |
|---|---|
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| 2SD1260A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SD1260 | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD1261 | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD1262 | Silicon NPN triple diffusion planar type Darlington |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1259/2SD1259A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1259. 2SD1259A - NPN Transistor |
| 2SD1259A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
| 2SD1259AO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD1259AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD1259AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
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