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參數(shù)資料
| 型號(hào)： | 2SD1251OP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | N TYPE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | 2SD1251OP |
1
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
s Features
q
Wide area of safe operation (ASO)
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
60
80
60
80
8
6
4
1
30
1.3
150
–55 to +150
Unit
V
A
W
C
2SD1251
2SD1251A
2SD1251
2SD1251A
TC=25°C
Ta=25
°C
Note: Ordering can be made by the common rank (OP rank hFE2 = 50 to 160) in the rank classification.
*1h
FE2 Rank classification
Rank
Q
P
O
hFE2
30 to 60
50 to 100
80 to 160
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCEO(sus)
*2
hFE1
hFE2
*1
VBE
VCE(sat)
fT
Conditions
VCB = 20V, IE = 0
VEB = 8V, IC = 0
IC = 0.2A, L = 25mH
VCE = 3V, IC = 0.1A
VCE = 3V, IC = 1A
IC = 2A, IB = 0.4A
VCE = 10V, IC = 0.2A, f = 0.5MHz
min
60
80
40
30
typ
1
max
30
1
160
1.2
1
Unit
A
mA
V
MHz
2SD1251
2SD1251A
*2V
CEO(sus) Test circuit
X
I
C(A)
0.2
0.1
60/80
V
CE(V)
L 25mH
15V
1
Y
G
6V
120
50/60Hz mercury relay
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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| 2SD1253R | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1253AP | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1257AR | 7 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD1258PQ | 1 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 2SD1259P | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1251P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1251Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1252 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type(For power amplification) |
| 2SD1252/2SD1252A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1252. 2SD1252A - NPN Transistor |
| 2SD1252A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For power amplification) |
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