- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33425 > 2SD1220-R(2-7B1A) 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SD1220-R(2-7B1A) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 2SD1220-R(2-7B1A) |
Philips Semiconductors
Product specification
Triacs
BT137X series E
sensitive gate
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance
full or half cycle
junction to heatsink
with heatsink compound
-
4.5
K/W
without heatsink compound
-
6.5
K/W
R
th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
2.5
10
mA
T2+ G-
-
4.0
10
mA
T2- G-
-
5.0
10
mA
T2- G+
-
11
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
3.0
25
mA
T2+ G-
-
14
35
mA
T2- G-
-
3.0
25
mA
T2- G+
-
4.0
35
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
2.5
20
mA
V
T
On-state voltage
I
T = 10 A
-
1.3
1.65
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A; Tj = 125 C
0.25
0.4
-
V
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 C;
-
50
-
V/
s
off-state voltage
exponential waveform; gate open circuit
t
gt
Gate controlled turn-on
V
D = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s;
-
2
-
s
time
I
TM = 12 A
June 2001
2
Rev 1.400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1220-O(2-7B1A) | 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1221-GR | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1221-Y | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1221-Y(2-7B1A) | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1221-Y(2-7B2A) | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1220Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1.5A I(C) | TO-251AA |
| 2SD1221 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-6460V 3A 20W BCE |
| 2SD1221_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application |
| 2SD1221GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-251 |
| 2SD1221-GR(Q) | 制造商:Toshiba 功能描述:Trans GP BJT NPN 60V 3A 3-Pin (2+Tab) PW-Mold |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。