參數(shù)資料
型號: 2SD1177
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial(外延NPN晶體管)
中文描述: npn型硅外延(外延npn型晶體管)
文件頁數(shù): 2/6頁
文件大?。?/td> 33K
代理商: 2SD1177
2SD1177
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE1
*
h
FE2
V
BE
V
CE (sat)
1
μA
V
CB
= 80 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 5 V, I
C
= 0.5 A*
V
CE
= 5 V, I
C
= 2 A*
V
CE
= 5 V, I
C
= 2 A*
I
C
= 1.5 V, I
B
= 0.15 A*
Emitter cutoff current
1
μA
DC current transfer ratio
1
60
200
2
40
2
Base to emitter voltage
1.4
V
2
Collector to emitter saturation
voltage
0.35
1.0
V
2
Gain bandwidth product
f
T
Cob
230
MHz
V
CE
= 5 V, I
C
= 0.5 A*
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2
Collector output capacitance
Note:
1. The 2SD1177 is grouped by h
FE1
as follows.
2. Pulse test.
50
pF
B
C
60 to 120
100 to 200
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參數(shù)描述
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