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參數(shù)資料
| 型號(hào)： | 2SD1164L |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 12K |
| 代理商： | 2SD1164L |
Absolute Maximum Ratings
(Ta = 25°C)
Item
————————————————————–
Collector to base voltage
————————————————————–
Collector to emitter voltage
————————————————————–
Emitter to base voltage
————————————————————–
Collector current
————————————————————–
Collector peak current
————————————————————–
Collector power dissipation
————————————————————–
Junction temperature
————————————————————–
Storage temperature
Symbol Rating Unit
V
CBO
400
V
V
CEO
300
V
V
EBO
7
V
I
C
6
A
i
C(peak)
10
A
P
C*1
50
W
Tj
150
°C
Tstg
–55 to °C
+150
————————————————————–
Note: 1. Value at T
C
= 25°C.
Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to base breakdown voltage
V
(BR)CBO
400
———————————————————————————————————————————
Collector to emitter sustain voltage
V
CEO(sus)
300
Symbol
Min
Typ
Max
Unit
Test condition
—
—
V
I
C
= 0.1 mA, I
E
= 0
—
—
V
I
C
= 4 A, PW = 50 μs,
f = 50 Hz, L = 10 mH
———————————————————————————————————————————
Emitter to base breakdown voltage
V
(BR)EBO
7
———————————————————————————————————————————
Collector cutoff current
I
CEO
—
———————————————————————————————————————————
DC current transfer ratio
h
FE
500
———————————————————————————————————————————
Collector to emitter saturation voltage
V
CE(sat)
—
————————————————————————————————
Base to emitter saturation voltage
V
BE(sat)
—
———————————————————————————————————————————
Turn on time
t
on
—
————————————————————————————————
I
B1
= –I
B2
= 40 mA
Turn off time
t
off
—
———————————————————————————————————————————
Note: 1. Pulse Test.
—
—
V
I
E
= 50 mA, I
C
= 0
—
100
μA
V
CE
= 300 V, R
BE
=
∞
—
—
V
CE
= 2 V, I
C
= 4 A
*1
—
1.5
V
I
C
= 4 A, I
B
= 40 mA
*1
—
2.0
V
2.0
—
μs
I
C
= 4 A,
23
—
μs
See characteristics curves of 2SD991
K
.
123
300
typ
150
typ
2
3
1
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
2SD1114
K
Silicon NPN Triple Diffused
High Voltage Switching, Igniter
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| 2SD1165A | TRANSISTOR | BJT | DARLINGTON | NPN | 900V V(BR)CEO | 100A I(C) | DISC-6 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1164L-Z | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR |
| 2SD1164M | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BJT |
| 2SD1164M-Z | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR |
| 2SD1164-Z | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
| 2SD1165A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 900V V(BR)CEO | 100A I(C) | DISC-6 |
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