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參數(shù)資料
| 型號： | 2SD1163 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 142K |
| 代理商： | 2SD1163 |
2SD1163, 2SD1163A
2
Absolute Maximum Ratings (Ta = 25°C)
Rating
Item
Symbol
2SD1163
2SD1163A
Unit
Collector to base voltage
V
CBO
300
350
V
Collector to emitter voltage
V
CEO
120
150
V
Emitter to base voltage
V
EBO
66V
Collector current
I
C
77A
Collector peak current
I
C (peak)
10
A
Collector surge current
I
C (surge)
20
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
2SD1163
2SD1163A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CBO
——5
———
mA
V
CB = 300 V, IE = 0
———
——5
mA
V
CB = 350 V, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
—
150
—
V
I
C = 10 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
6—
—
6—
—
V
I
E = 10 mA, IC = 0
DC current transfer ratio h
FE
25
—
25
—
V
CE = 5 V, IC = 5 A*
1
Collector to emitter
saturation voltage
V
CE (sat)
—
2.0
—
1.0
V
I
C = 5 A, IB = 0.5 A*
1
Base to emitter
saturation voltage
V
BE (sat)
—
1.2
—
1.2
V
I
C = 5 A, IB = 0.5 A*
1
Fall time
t
f
—
0.5
—
0.5
sI
CP = 3.5 A,
I
B1 = 0.45 A
Note:
1. Pulse test.
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PDF描述 |
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| 2SD1164-Z-T1K | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| 2SD1164-Z-T1M | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1164-Z-T2K | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1164-ZM | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1163A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1163A(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1164 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SD1164-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,2A,TO-252 制造商:Renesas 功能描述:Darlington BJT |
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