參數(shù)資料
型號: 2SD1138C
英文描述: TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB
中文描述: 晶體管|晶體管| npn型| 150伏五(巴西)總裁|甲一(c)| TO - 220AB現(xiàn)有
文件頁數(shù): 1/2頁
文件大小: 12K
代理商: 2SD1138C
Absolute Maximum Ratings
(Ta = 25°C)
Item
————————————————————–
Collector to base voltage
————————————————————–
Collector to emitter voltage
————————————————————–
Emitter to base voltage
————————————————————–
Collector current
————————————————————–
Collector peak current
————————————————————–
Collector power dissipation
————————————————————–
Junction temperature
————————————————————–
Storage temperature
Symbol Rating Unit
V
CBO
400
V
V
CEO
300
V
V
EBO
7
V
I
C
6
A
i
C(peak)
10
A
P
C*1
50
W
Tj
150
°C
Tstg
–55 to °C
+150
————————————————————–
Note: 1. Value at T
C
= 25°C.
Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to base breakdown voltage
V
(BR)CBO
400
———————————————————————————————————————————
Collector to emitter sustain voltage
V
CEO(sus)
300
Symbol
Min
Typ
Max
Unit
Test condition
V
I
C
= 0.1 mA, I
E
= 0
V
I
C
= 4 A, PW = 50 μs,
f = 50 Hz, L = 10 mH
———————————————————————————————————————————
Emitter to base breakdown voltage
V
(BR)EBO
7
———————————————————————————————————————————
Collector cutoff current
I
CEO
———————————————————————————————————————————
DC current transfer ratio
h
FE
500
———————————————————————————————————————————
Collector to emitter saturation voltage
V
CE(sat)
————————————————————————————————
Base to emitter saturation voltage
V
BE(sat)
———————————————————————————————————————————
Turn on time
t
on
————————————————————————————————
I
B1
= –I
B2
= 40 mA
Turn off time
t
off
———————————————————————————————————————————
Note: 1. Pulse Test.
V
I
E
= 50 mA, I
C
= 0
100
μA
V
CE
= 300 V, R
BE
=
V
CE
= 2 V, I
C
= 4 A
*1
1.5
V
I
C
= 4 A, I
B
= 40 mA
*1
2.0
V
2.0
μs
I
C
= 4 A,
23
μs
See characteristics curves of 2SD991
K
.
123
300
typ
150
typ
2
3
1
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
2SD1114
K
Silicon NPN Triple Diffused
High Voltage Switching, Igniter
相關(guān)PDF資料
PDF描述
2SD1138D Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
2SD1141K
2SD1145E Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
2SD1145F TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92VAR
2SD1145G Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1138C(E) 制造商:Renesas Electronics Corporation 功能描述:
2SD1138D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB
2SD1139 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220
2SD1140 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Micro Motor Drive, Hammer Drive Applications
2SD1140(F) 制造商:Toshiba 功能描述:NPN Bulk