參數(shù)資料
型號(hào): 2SD1138B
元件分類(lèi): 功率晶體管
英文描述: 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 141K
代理商: 2SD1138B
2SD1138
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
200
V
Collector to emitter voltage
V
CEO
150
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
2A
Collector peak current
I
C (peak)
5A
Collector power dissipation
P
C
1.8
W
P
C*
1
30
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
150
V
I
C = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
6—
VI
E = 5 mA, IC = 0
Collector cutoff current
I
CBO
——
1
AV
CB = 120 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
320
V
CE = 4 V, IC = 50 mA
h
FE2
60
V
CE = 10 V, IC = 500 mA*
2
Collector to emitter saturation
voltage
V
CE (sat)
3.0
V
I
C = 500 mA, IB = 50 mA*
2
Base to emitter voltage
V
BE
1.0
V
CB = 4 V, IC = 50 mA
Collector output capacitance
Cob
20
pF
V
CB = 100 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1138 is grouped by h
FE1 as follows.
2. Pulse test.
BC
D
60 to 120
100 to 200
160 to 320
相關(guān)PDF資料
PDF描述
2SD1138C-E 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1138C-E 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1138C 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1138 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1138D 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1138C 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB
2SD1138C(E) 制造商:Renesas Electronics Corporation 功能描述:
2SD1138D 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB
2SD1139 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220
2SD1140 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Micro Motor Drive, Hammer Drive Applications