參數(shù)資料
型號: 2SD1135C-E
元件分類: 功率晶體管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 5/6頁
文件大小: 140K
代理商: 2SD1135C-E
Data Sheet D18893EJ1V0DS
3
2SK2552C
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT
-
Derating
Fa
ctor
-
%
0
20
40
60
80
100
120
0
255075
100
125
150
175
TA - Ambient Temperature - °C
I
D
-
Drai
nCur
rent
-
μ
A
0
200
400
600
800
1000
024
6
8
10
0 V
0.2 V
0.3 V
0.1 V
VGS = 0.2 V
0.1 V
VDS - Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
-
Gate
to
So
u
rce
Curr
ent
-
μ
A
0
10
20
30
40
10
20
30
40
0.2 0.4 0.6 0.8
0.2
0.4
0.6
0.8
VGS - Gate to Source Voltage - V
I
D
-
Drain
Current
-
μ
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
VDS = 2.0 V
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
is
s
-Input
Capa
ci
tan
ce
-
pF
1
10
110
100
VGS = 0 V
f = 1.0 MHz
VDS - Drain to Source Voltage - V
|y
fs
|-
F
or
w
ar
d
T
ransfer
A
dmittan
ce
-
mS
V
GS(
off
)-
Gate
Cut
-off
Voltage
-
V
0.1
1
10
100
1000
| yfs |
VGS(off)
VDS = 2.0 V
IDSS - Zero Gate Voltage Drain Current -
μA
相關(guān)PDF資料
PDF描述
2SD1135C 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1135 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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