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參數(shù)資料
| 型號： | 2SD1134D |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 166K |
| 代理商： | 2SD1134D |
2SD1133, 2SD1134
2
Electrical Characteristics (Ta = 25°C)
2SD1133
2SD1134
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
70
——70——V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
50
——60——V
I
C = 50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
——5
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
1
——
1
AV
CB = 50 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
320
60
—
320
V
CE = 4V
I
C = 1 A*
2
h
FE2
35
——35——
I
C = 0.1 A*
2
Collector to emitter
saturation voltage
V
CE(sat)
—
1—
—
1VI
C = 2 A, IB = 0.2 A*
2
Base to emitter voltage
V
BE
—
1—
—
1VV
CE = 4 V, IC = 1 A*
2
Gain bandwidth product
f
T
—
7
—
7
—
MHz
V
CE = 4 V, IC = 0.5 A*
2
Notes: 1. The 2SD1133 and 2SD1134 are grouped by h
FE1 as follows.
2. Pulse test.
BC
D
60 to 120
100 to 200
160 to 320
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
2
5
1.0
0.5
Collector
current
I
C
(A)
0.2
0.1
0.05
2
15
50
10
20
100
Collector to emitter voltage VCE (V)
ICmax(Continuous)
Area of Safe Operation
(TC = 25°C)
(20 V, 2 A)
(50 V, 0.24 A)
(60 V, 0.15 A)
(10 V, 4 A)
DC
Operation
2SD1133
2SD1134
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1133D | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1134 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1133C | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1134B | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1134C | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1134K | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Triple Diffused |
| 2SD1135 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SD1135B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SD1135C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SD1136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Bipolar Transistors |
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