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參數(shù)資料
| 型號(hào)： | 2SD1126 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | 2SD1126 |
2SD1126(K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
Tj
120
V
Collector to emitter voltage
120
V
Emitter to base voltage
7
V
Collector current
10
A
Collector peak current
15
A
Collector power dissipation
1
50
W
Junction temperature
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
Note:
1. Value at T
C
= 25°C.
I
D
10
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= 25 mA, R
BE
=
∞
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
—
V
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 200 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
t
on
t
off
—
—
100
μA
V
CB
= 120 V, I
E
= 0
V
CE
= 100 V, R
BE
= _
V
CE
= 3 V, I
C
= 5 A*
I
C
= 5 A, I
B
= 10 mA*
I
C
= 10 A, I
B
= 0.1 A*
I
C
= 5 A, I
B
= 10 mA*
I
C
= 10 A, I
B
= 0.1 A*
I
D
= 10 A*
I
C
= 5 A, I
B1
= –I
B2
= 10 mA
—
—
10
μA
DC current transfer ratio
1000
—
2000
1
Collector to emitter saturation
—
—
1.5
V
1
voltage
—
—
3.0
V
1
Base to emitter saturation
—
—
2.0
V
1
voltage
—
—
3.5
V
1
C to E diode forward voltage
—
—
3.0
V
1
Turn on time
—
0.8
—
μs
Turn off time
Note:
—
8.0
—
μs
1. Pulse test.
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| 2SD1126(K) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 10A I(C) | TO-220AB |
| 2SD1126K | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused |
| 2SD1127 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| 2SD1127K | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述: |
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