- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369128 > 2SD1113(K) TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD1113(K) |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|叩| 300V五（巴西）總裁| 6A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 12K |
| 代理商： | 2SD1113(K) |
Absolute Maximum Ratings
(Ta = 25°C)
Item
————————————————————–
Collector to base voltage
————————————————————–
Collector to emitter voltage
————————————————————–
Emitter to base voltage
————————————————————–
Collector current
————————————————————–
Collector peak current
————————————————————–
Collector power dissipation
————————————————————–
Junction temperature
————————————————————–
Storage temperature
Symbol Rating Unit
V
CBO
400
V
V
CEO
300
V
V
EBO
7
V
I
C
6
A
i
C(peak)
10
A
P
C*1
50
W
Tj
150
°C
Tstg
–55 to °C
+150
————————————————————–
Note: 1. Value at T
C
= 25°C.
Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to base breakdown voltage
V
(BR)CBO
400
———————————————————————————————————————————
Collector to emitter sustain voltage
V
CEO(sus)
300
Symbol
Min
Typ
Max
Unit
Test condition
—
—
V
I
C
= 0.1 mA, I
E
= 0
—
—
V
I
C
= 4 A, PW = 50 μs,
f = 50 Hz, L = 10 mH
———————————————————————————————————————————
Emitter to base breakdown voltage
V
(BR)EBO
7
———————————————————————————————————————————
Collector cutoff current
I
CEO
—
———————————————————————————————————————————
DC current transfer ratio
h
FE
500
———————————————————————————————————————————
Collector to emitter saturation voltage
V
CE(sat)
—
————————————————————————————————
Base to emitter saturation voltage
V
BE(sat)
—
———————————————————————————————————————————
Turn on time
t
on
—
————————————————————————————————
I
B1
= –I
B2
= 40 mA
Turn off time
t
off
—
———————————————————————————————————————————
Note: 1. Pulse Test.
—
—
V
I
E
= 50 mA, I
C
= 0
—
100
μA
V
CE
= 300 V, R
BE
=
∞
—
—
V
CE
= 2 V, I
C
= 4 A
*1
—
1.5
V
I
C
= 4 A, I
B
= 40 mA
*1
—
2.0
V
2.0
—
μs
I
C
= 4 A,
23
—
μs
See characteristics curves of 2SD991
K
.
123
300
typ
150
typ
2
3
1
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
2SD1114
K
Silicon NPN Triple Diffused
High Voltage Switching, Igniter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1198AQ | TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | SC-71 |
| 2SD1198AR | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1198AS | TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | SC-71 |
| 2SD1198Q | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1198R | TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 1A I(C) | SC-71 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1114K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SD1115 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor |
| 2SD1115K | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SD1117 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| 2SD1118 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。