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參數(shù)資料
| 型號： | 2SD1051Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 197K |
| 代理商： | 2SD1051Q |
Transistors
1
Publication date: November 2002
SJC00206BED
2SD1051
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0819 (2SB819)
■ Features
High collector-emitter voltage (Base open) V
CEO
Low collector power dissipation P
C
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
40
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1.5
A
Peak collector current
ICP
3A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
CBO
IC
= 1 mA, I
E
= 050
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 040
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 01
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 10 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 010
A
Forward current transfer ratio *
1, 2
hFE
VCE = 5 V, IC = 1 A
80
120
220
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 1.5 A, I
B
= 0.15 A
1
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 2 A, IB = 0.2 A
1.5
V
Transition frequency *
1
fT
VCB = 5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
45
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
1 : Base
2 : Collector
3 : Emitter
M-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Note) The part number in the parenthesis shows conventional part number.
Rank
Q
R
hFE
80 to 160
120 to 220
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1051R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SD1052 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-220-AB 50V 3A 30W BCE 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1052A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 50V 3A 1.5W BCE |
| 2SD1054 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 300V 3A 80W BEC |
| 2SD1055 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium Power Transistor 32V, 2A |
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