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參數(shù)資料
| 型號： | 2SD1046D |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PB, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SD1046D |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
For LF Power Amplifier, 50W Output
Large Power Switching Applications
Ordering number:ENN677D
2SB816/2SD1046
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/4017KI/6284KI, MT No.677–1/4
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( ) : 2SB816
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2022A
[2SB816/2SD1046]
Features
Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
Wide ASO because of built-in ballast resistance.
Goode dependence of fT on current and good HF
characteristic.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Tc=25C
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* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
Continued on next page.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1046-D | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SB816-E | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SB816-D | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SB816 | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SD1046-E | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1046E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | TO-218VAR |
| 2SD1047 | 功能描述:兩極晶體管 - BJT IGBT & Power Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1047 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN TO-3PB |
| 2SD1047D | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-247VAR |
| 2SD1047E | 制造商:Taitron Components Inc 功能描述: |
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