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參數(shù)資料
| 型號： | 2SC982TM |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 294K |
| 代理商： | 2SC982TM |
2SC982TM
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington)
2SC982TM
Printer Drive, Core Drive and LED Drive Applications
Low Frequency Amplifier Applications
High DC current gain: hFE (1) = 5000 (min) (IC = 10 mA)
: hFE (2) = 10000 (min) (IC = 100 mA)
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
10
V
DC
IC
300
Collector current
Pulsed
(Note 1)
ICP
500
mA
Base current
IB
10
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width <= 10 ms, duty cycle <= 10%
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
0.1
μA
hFE (1)
VCE = 5 V, IC = 10 mA
5000
DC current gain
hFE (2)
VCE = 2 V, IC = 100 mA
10000
Collector-emitter saturation voltage
VCE (sat)
IC = 300 mA, IB = 0.3 mA
0.9
1.3
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 100 mA
1.25
1.6
V
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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相關代理商/技術參數(shù) |
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