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參數(shù)資料
| 型號： | 2SC6093LS |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220FI(LS), 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SC6093LS |
2SC6093LS
No. A0274-1/4
Features
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
5A
Collector Current (Pulse)
ICP
12
A
Collector Dissipation
PC
2.0
W
Tc=25°C25
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0A
10
A
Collector Cutoff Current
ICES
VCE=1500V, RBE=0
1.0
mA
Collector Sustain Voltage
VCEO(sus)
IC=100mA, IB=0A
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
40
130
mA
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1.35A, IB=0.27A
0.1
0.3
V
VCE(sat)2
IC=2.7A, IB=0.54A
2
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2.7A, IB=0.54A
1.5
V
DC Current Gain
hFE1VCE=5V, IC=0.5A
10
hFE2VCE=5V, IC=3A
5.3
7.5
Diode Forward Voltage
VF
IEC=4A
2
V
Fall Time
tf
IC=1.8A, IB1=0.36A, IB2=--0.72A
0.2
s
Ordering number : ENA0274
11707KC TI IM TC-00000456
SANYO Semiconductors
DATA SHEET
2SC6093LS
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6094 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SC6094-TD-E | 功能描述:兩極晶體管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6095 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications |
| 2SC6095-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 2.5A 80V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6096 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications |
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