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參數(shù)資料
| 型號： | 2SC5957-M |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SC5957-M |
2SC5957M
No.A0152-1/4
Features
High breakdown voltage and high reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
500
V
Collector-to-Emitter Voltage
VCEO
400
V
Emitter-to-Base Voltage
VEBO
7V
Collector Current
IC
10
A
Collector Current (Pulse)
ICP
PW
≤300s, duty cycle≤10%
20
A
Base Current
IB
3.5
A
Collector Dissipation
PC
1.75
W
Tc=25
°C50
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=400V, IE=0A
10
A
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
10
A
hFE1VCE=5V, IC=1.2A
20*
40*
DC Current Gain
hFE2VCE=5V, IC=6A
10
hFE3VCE=5V, IC=1mA
10
Continued on next page
Rank
M
hFE
20 to 40
Ordering number : ENA0152
O2005KB MS IM TB-00001787
2SC5957M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
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| 2SC5957 | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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| 2SC5960 | 7 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SC5980-TL | 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| 2SC5964-S-TD-H | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| 2SC5964-TD-H | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5966-CA | 制造商:ON Semiconductor 功能描述: |
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