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參數(shù)資料
| 型號： | 2SC5890 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 161K |
| 代理商： | 2SC5890 |
2SC5890
Rev.0, Aug. 2002, page 2 of 14
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
12
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
75
mA
Collector power dissipation
Pc
700*
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
*When using alumina ceramic board (25 x 60 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
—
V
I
C = 10 A, IE = 0
Collector cutoff current
I
CBO
—
1
A
V
CB = 12 V, IE = 0
Collector cutoff current
I
CEO
—
1
mA
V
CE = 9 V, RBE = ∞
Emitter cutoff current
I
EBO
—
10
A
V
EB = 1.5 V, IC = 0
DC current transfer ratio
h
FE
100
150
200
V
CE = 5 V, IC = 20 mA
Collector output capacitance
Cob
—
0.9
1.5
pF
V
CB = 5 V, IE = 0, f = 1 MHz
Reverse transfer capacitance
Cre
—
0.85
—
pF
V
CB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
5.5
7.8
—
GHz
V
CE = 5 V, IC = 30 mA,
f = 1 GHz
Forward transfer coefficient
S212
—
11
—
dB
V
CE = 5 V, IC = 30 mA,
f = 1 GHz
Power gain
PG
9.5
12
—
dB
V
CE = 5 V, IC = 30 mA,
f = 900 MHz
Noise figure
NF
—
1.0
1.9
dB
V
CE = 5 V, IC = 5 mA,
f = 900 MHz
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