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參數(shù)資料
| 型號： | 2SC5801 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | M13, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 56K |
| 代理商： | 2SC5801 |
NE851M13
NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
IDEAL FOR
≤ 3 GHz OSCILLATORS
LOW PHASE NOISE
LOW PUSHING FACTOR
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
PRELIMINARY DATA SHEET
PART NUMBER
NE851M13
EIAJ1 REGISTERED NUMBER
2SC5801
PACKAGE OUTLINE
M13
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
GHz
3.0
4.5
–
fT
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
GHz
5.0
6.5
|S21E|2
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
dB
3.0
4.0
–
|S21E|2
Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz
dB
4.5
5.5
–
NF
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
–
1.9
2.5
CRE
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
pF
–
0.6
0.8
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
–
600
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
–
600
hFE
DC Current Gain2 at VCE = 1 V, IC = 5 mA
100
120
145
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
DESCRIPTION
The NE851M13 transistor is designed for oscillator applica-
tions up to 3 GHz. The NE851M13 features low voltage
operation, low phase noise, and high immunty to pushing
effects. NEC's new low profile/flat lead style "M13" package is
ideal for today's portable wireless applications.
+0.1
–0.05
+0.1
–0.05
+0.1
–0.05
0.5
3
0.1
1
2
1.0
+0.1
–0.05
+0.1
–0.05
0.3
0.35
0.7
0.15
+0.1
–0.05
0.15
0.2
0.125
0.5±0.05
E
7
Bottom View
1
2
3
California Eastern Laboratories
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5808-TL-E | 制造商:SANYO 功能描述:NPN 400V 2.5A 20 to 50 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 700V 2.5A TO-251 制造商:Sanyo 功能描述:0 |
| 2SC5810(TE12L,F) | 功能描述:MOSFET Power Trans 100V 0.17V Vce 85ns RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SC581300L | 功能描述:TRANS NPN 80VCEO 1.5A MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5819(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A SC-62 |
| 2SC582 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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