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參數(shù)資料
| 型號(hào)： | 2SC5758WF-TR-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 218K |
| 代理商： | 2SC5758WF-TR-E |
2SC5758
Rev.5.00 Aug 10, 2005 page 3 of 8
Main Characteristics
0
50
100
150
200
100
Collector
Power
Dissipation
P
c
(mW)
Collector Power Dissipation Curve
10
100
200
0
120
Collector Current
IC (mA)
DC
Current
Transfer
Ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
25
50
VCE = 1 V
00.4
0.6
1
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
0
0.5
1
1.5
3.5
Collector
Current
I
C
(mA)
Typical Output Characteristics
Ambient Temperature
Ta (°C)
Collector to Emitter Voltage
VCE (V)
Base to Emitter Voltage
VBE (V)
0.2
0.8
VCE = 1 V
2.5
2
3
100
80
60
40
20
50
40
30
20
10
500
A
IB = 50 A
100 A
150 A
200
A
250
A
300
A
350
A
400
A
450
A
50
40
30
20
10
1.2
2.0
Collector to Base Voltage
VCB (V)
Collector
Output
Capacitance
C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
0.4
0.8
1.2
1.6
2.0
00.4
0.8
1.6
12
5
10
20
50
100
0
4
8
12
16
20
Collector Current
IC (mA)
Gain
Bandwidth
Product
f
T
(GHz)
Gain Bandwidth Product vs.
Collector Current
VCE = 1 V
f =2 GHz
IE = 0
f = 1 MHz
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| 2SC5761-T2FB | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
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| 2SC5763N | 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5761-T2-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| 2SC5761-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5773JR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.08A 3-Pin MPAK T/R |
| 2SC5778 | 制造商:Sanyo Fisher 功能描述:800V 15A 85W Bce Sanyo Transistor TO-3Pmlh |
| 2SC578 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .6W |
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