參數(shù)資料
型號(hào)： 2SC5706-TL
廠商： SANYO SEMICONDUCTOR CO LTD
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： TP-FA, 4 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 45K
代理商： 2SC5706-TL
2SA2039 / 2SC5706
No.6912-1/5
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications ( ) : 2SA2039
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)100
V
Collector-to-Emitter Voltage
VCES
(--50)100
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)5
A
Collector Current (Pulse)
ICP
(--)7.5
A
Base Current
IB
(--)1.2
A
Collector Dissipation
PC
0.8
W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
A
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(360)400
MHz
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6912B
62405EA MS IM TB-00001404 / 30101 TS IM TA-3232
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2039 / 2SC5706
PNP / NPN Epitaxial Planar Silicon Transistors
High Current Switching Applications
相關(guān)PDF資料
PDF描述
2SC5706-TL 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5706TP 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5706TP 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5706TP-FA 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SA2039TP 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5706-TL-E 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5706-TL-H 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5706-T-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-252VAR, LEAD FREE
2SC5707 制造商:SANYO Semiconductor Co Ltd 功能描述:BIPOL TRANSISTOR NPN 50V I-PAK 制造商:SANYO Semiconductor Co Ltd 功能描述:50V 8A 15W Bcec Sanyo Transistor Tp 3-Pin
2SC5707-E 功能描述:兩極晶體管 - BJT BIP NPN 8A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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