- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370084 > 2SC5663 (Rohm CO.,LTD.) Low frequency transistor (12V, 0.5A) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC5663 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Low frequency transistor (12V, 0.5A) |
| 中文描述： | 低頻晶體管（12V的，0.5A的） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | 2SC5663 |
2SC5585 / 2SC5663
Transistors
z
Packaging specifications
Rev.B
2/2
Package
Code
Basic ordering
unit (pieces)
Taping
h
FE
2SC5663
2SC5585
T2L
8000
TL
3000
Type
z
Electrical characteristic curves
0
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
C
C
100
0.5
1.0
1.5
V
CE
= 2V
1000
T
1
2
°
C
2
°
C
-
°
C
2
5
20
50
200
500
1
2
5
10
20
50
100
200
500
COLLECTOR CURRENT : I
C
(mA)
Fig.2 DC current gain vs.
collector current
10
D
F
1000
20
50
100
200
500
1000
Ta =
1
25
°
C
25
°
C
5
2
1
V
CE
=
2V
-40
°
C
1
2
5
10
20
50
100
200
I
C
/
I
B
=
20
1
2
5
10
20
50
100
200
500 1000
C
C
COLLECTOR CURRENT : I
C
(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current (
Ι
)
Ta =
1
25
°
C
500
1000
25
°
C
-40
°
C
1
2
5
10
20
50
100
200
Ta = 25
°
C
1
2
5
10
20
50
100
200
500 1000
C
C
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
ΙΙ
)
I
C
/
I
B
=
50
500
1000
20
10
10
20
50
100
200
500
1000
2000
I
C
/
I
B
=
20
1
2
5
10
20
50
100
200
500 1000
C
B
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
Ta =
-40
°
C
5000
10000
25
°
C
125
°
C
2
1
5
10
20
50
100
200
500 1000
1
2
5
10
20
50
100
200
500
1000
Ta = 25
°
C
Pulsed
V
CE
=
2V
f
T
(
M
Z
)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.6 Collector output capacitance
Emitter input capacitance
vs. base voltage
0.2
0.1
0.5
1
2
5
10
20
50
100
1
2
5
10
20
50
100
200
500
1000
Ta = 25
°
C
I
E
=
f
=
10A
C
E
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Cib
Cob
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5593 | Silicon NPN Epitaxial High Frequency Low Noise Amplifier |
| 2SC5594 | Silicon NPN Epitaxial High Frequency Low Noise Amplifier |
| 2SC5606-T1 | NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
| 2SC5606 | NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
| 2SC5610 | NPN Epitaxial Planar Silicon Transistor for DC/DC Converter Applications(用于DC/DC變換器的NPN硅外延平面型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5663T2L | 功能描述:兩極晶體管 - BJT NPN 12V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5669 | 制造商:SANYO 功能描述:NPN 230V 15A 60 to 160 TO-3PB Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 230V 15A TO-247 制造商:SANYO Semiconductor Co Ltd 功能描述:NPN 230V 15A 140W 262010 Sanyo Transistor TO-247Var 制造商:Sanyo 功能描述:Trans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-3PB |
| 2SC5674-T3-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5676-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5682 | 制造商:Sanyo Fisher 功能描述:800V 20A 95W Bce Sanyo Transistor TO-3Pmlh |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。