參數(shù)資料
型號: 2SC5646
元件分類: 小信號晶體管
英文描述: S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: SSFP, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 32K
代理商: 2SC5646
2SC5646
No.6606-1/6
UHFtoSBandLow-Noise
Amplifier
andOSC Applications
Features
Low-noise use : NF=1.5dB typ (f=2GHz).
High cut-off frequency : fT=10GHz typ (VCE=1V).
: fT=12.5GHz typ (VCE=3V).
Low operating voltage.
High gain :
S21e2=9.5dB typ (f=2GHz).
Ultraminiature and thin flat leadless package
(1.4mm!0.8mm!0.6mm).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
9V
Collector-to-Emitter Voltage
VCEO
4V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Collector Dissipation
PC
100
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
10
A
DC Current Gain
hFE
VCE=1V, IC=5mA
100
160
Gain-Bandwidth Product
fT1VCE=1V, IC=5mA
8
10
GHz
fT2VCE=3V, IC=15mA
12.5
GHz
Output Capacitance
Cob
VCB=1V, f=1MHz
0.55
0.7
pF
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.4
pF
Forward Transfer Gain
S21e21VCE=1V, IC=5mA, f=2GHz
8
9.5
dB
S21e22VCE=3V, IC=15mA, f=2GHz
10.5
dB
Noise Figure
NF
VCE=1V, IC=3mA, f=2GHz
1.5
2.3
dB
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6606
2SC5646
Package Dimensions
unit : mm
2159
[2SC5646]
72100 TS IM TA-2972
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
1.4
0.45
1
3
2
0.3
1.4
0.8
0.3
0.1
相關(guān)PDF資料
PDF描述
2SC5652-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5652-T1 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5652-T1FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5653-T1EB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5653 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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