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參數資料
| 型號： | 2SC5606-T1FB-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SC5606-T1FB-A |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14658EJ3V0DS00 (3rd edition)
Date Published June 2001 NS CP(K)
Printed in Japan
1999, 2001
The mark
shows major revised points.
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
Suitable for high-frequency oscillation
fT = 25 GHz technology adopted
3-pin ultra super minimold
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5606
50 pcs (Non reel)
8 mm wide embossed taping
2SC5606-T1
3 kpcs/reel
Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
115
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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