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參數(shù)資料
| 型號： | 2SC5511 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | High-Voltage Switching Transistor(高電壓開關晶體管) |
| 中文描述： | 高壓開關晶體管（高電壓開關晶體管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SC5511 |
2SC5511
Transistors
High-voltage Switching
(Audio output amplifier transistor,
TV velocity modulation transistor)
(160V, 1.5A)
2SC5511
!
Features
1) Flat DC current gain characteristics.
2) High breakdown voltage. (BV
CEO
= 160V)
3) High f
T
. (Typ. 150MHz)
4) Wide SOA (safe operating area).
5) Complements the 2SA2005.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
160
160
5
1.5
2
20
150
55~+150
Unit
V
V
V
A
W
W (Tc = 25
°
C)
°
C
°
C
!
External dimensions
(Units : mm)
ROHM : TO-220FN
(3) Emitter(Source)
(2) Collector(Drain)
0.75
0.8
2.54
(3)
(1)
(3)
(2)
(1)
2.54
(2)
5
8
1
1
1
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit
2SC5511
TO-220FN
DE
-
500
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CEO
Min.
160
Typ.
Max.
Unit
V
Conditions
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter breakdown voltage
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
160
5
60
150
35
1
1
1
200
V
V
μ
A
μ
A
V
MHz
pF
I
C
= 50
μ
A
I
E
= 50
μ
A
V
CB
= 160V
V
EB
= 4V
I
C
/I
B
= 1A/0.1A
V
CE
= 5V , I
C
= 0.1A
V
CE
= 10V , I
E
= 0.2A , f = 100MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
I
C
= 1mA
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