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參數(shù)資料
| 型號： | 2SC5464FT-O |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | TESM, 2-1B1A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 112K |
| 代理商： | 2SC5464FT-O |
2SC5464FT
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5464FT
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
60
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 8 V, IC = 15 mA
5
7
GHz
S21e
2 (1)
VCE = 8 V, IC = 15 mA, f = 500 MHz
17.5
Insertion gain
S21e
2 (2)
VCE = 8 V, IC = 15 mA, f = 1 GHz
8
12
dB
NF (1)
VCE = 8 V, IC = 5 mA, f = 500 MHz
1
Noise figure
NF (2)
VCE = 8 V, IC = 5 mA, f = 1 GHz
1.1
2
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
(Note 1)
VCE = 8 V, IC = 15 mA
80
240
Output capacitance
Cob
0.75
pF
Reverse transfer capacitance
Cre
VCB = 8 V, IE = 0, f = 1 MHz
(Note 2)
0.5
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
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| 2SC5501A-4-TR-E | 功能描述:兩極晶體管 - BJT MEDIUM OUTPUT AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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