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參數(shù)資料
| 型號： | 2SC5405Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220D, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 158K |
| 代理商： | 2SC5405Q |
1
Power Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
s Features
q
High-speed switching
q
High forward current transfer ratio hFE which has satisfactory
linearity
q
Dielectric breakdown voltage of the package: > 5kV
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
80
50
6
3
1
20
2.0
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
IC = 1A, IB1 = 0.05A, IB2 = – 0.1A,
VCC = 50V
min
50
500
typ
0.5
75
0.3
3.5
0.9
max
100
1500
0.7
Unit
A
V
MHz
s
*h
FE Rank classification
Rank
P
Q
hFE
800 to 1500 500 to 1000
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9
±0.3
15.0
±0.5
13.7
±0.2
4.2
±0.2
4.6
±0.2
2.9
±0.2
0.8
±0.1
1.4
±0.2
23
φ3.2±0.1
2.6
±0.1
0.55
±0.15
2.54
±0.3
5.08
±0.5
3.0
±0.5
1.6
±0.2
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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