參數(shù)資料
型號(hào)： 2SC5405
廠商： PANASONIC CORP
元件分類： 功率晶體管
英文描述： Silicon NPN triple diffusion planar type
中文描述： 3 A, 50 V, NPN, Si, POWER TRANSISTOR
封裝： TO-220D, FULL PACK-3
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 37K
代理商： 2SC5405
1
Transistor
2SC5026
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1890
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
High collector to emitter voltage V
CEO
.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
80
80
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 40V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
80
5
120
60
typ
0.15
0.85
120
10
max
0.1
340
0.3
1.2
20
Unit
μ
A
V
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement
*1
h
FE
Rank classification
Rank
R
S
h
FE1
120 ~ 240
170 ~ 340
Marking symbol :
2A
相關(guān)PDF資料
PDF描述
2SC5027 NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER, COLOR TV HORIZONTAL DRIVER, CHROMA OUTPUT APPLICATIONS)
2SC5028 NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
2SC5029 NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
2SC5030 NPN EPITAXIAL TYPE (STOROBE FLASH, MUDIUM POWER AMPLIFIER APPLICATIONS)
2SC5032 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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