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參數(shù)資料
| 型號(hào)： | 2SC5405 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 3 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220D, FULL PACK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC5405 |
1
Transistor
2SC5026
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1890
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
High collector to emitter voltage V
CEO
.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
80
80
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 40V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
80
5
120
60
typ
0.15
0.85
120
10
max
0.1
340
0.3
1.2
20
Unit
μ
A
V
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement
*1
h
FE
Rank classification
Rank
R
S
h
FE1
120 ~ 240
170 ~ 340
Marking symbol :
2A
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|---|---|
| 2SC5027 | NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER, COLOR TV HORIZONTAL DRIVER, CHROMA OUTPUT APPLICATIONS) |
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| 2SC5029 | NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) |
| 2SC5030 | NPN EPITAXIAL TYPE (STOROBE FLASH, MUDIUM POWER AMPLIFIER APPLICATIONS) |
| 2SC5032 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5414AE | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel |
| 2SC5414AE-AA | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP NPN 100MA 12V FT=6.7G |
| 2SC5414AF | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Bulk |
| 2SC5414AF-AA | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel |
| 2SC5415AE-TD-E | 功能描述:兩極晶體管 - BJT ULAHIGH-FREQUENCY TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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