參數(shù)資料
型號： 2SC5322F
英文描述： TRANSISTOR | BJT | NPN | 5V V(BR)CEO | 10MA I(C) | EMD3
中文描述： 晶體管|晶體管|叩| 5V的五（巴西）總裁| 10mA的一（c）| EMD3
文件頁數(shù)： 1/3頁
文件大?。?/td> 47K
代理商： 2SC5322F
61598TS (KOTO) TA-1238 No.5883-1/3
2SC5304
Ordering number:EN5883
Inverter Lighting Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Triple Diffused Planar Silicon Transistor
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Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2079B
[2SC5304]
Features
High breakdown voltage (VCBO=1000V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
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Tc=25C
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Electrical Characteristics at Ta=25C
SANYO:TO-220FI (LS)
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1:Base
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2SC5322FT 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
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2SC5331(F) 制造商:Toshiba America Electronic Components 功能描述:
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