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參數(shù)資料
| 型號(hào)： | 2SC5289-T1KB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-61, 4 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 162K |
| 代理商： | 2SC5289-T1KB |
DATA SHEET
SILICON TRANSISTOR
The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
P–1 = 27 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5289-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark
To order evaluation samples, contact your nearby sales office.
(Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
6.0
V
Emitter to Base Voltage
VEBO
2.0
V
Collector Current
IC
300
mA
Total Power Dissipation
PT
200 (CW)
mW
1.2 (duty = 1/8)Note
W
3.0 (duty = 1/24)Note
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
Note Pulse period is 10 msec or less.
2SC5289
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
PACKAGE DRAWING
(Unit: mm)
Document No. PU10040EJ01V0DS (1st edition)
(Previous No. P10250EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
(1.9)
(1.8)
0.85
0.95
0.4
+0.1
–
0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
2
3
1
4
2.9±0.2
0.4
+0.1
–
0.05
0.4
+0.1
–
0.05
T-90
0.6
+0.1
–
0.05
1.1
+0.2
–
0.1
0.8
0.16
+0.1
–
0.06
0
to
0.1
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NEC Corporation 1995
NEC Compound Semiconductor Devices 2001
The mark
shows major revised points.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5291R | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SC5291 | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SC5291T | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SC5291R | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SC5297 | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5291 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
| 2SC5291R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
| 2SC5291S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
| 2SC5291S-AY | 功能描述:兩極晶體管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5291T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
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