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參數(shù)資料
| 型號(hào)： | 2SC5289-T1FB-A |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-61, 4 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | 2SC5289-T1FB-A |
1995
DATA SHEET
SILICON TRANSISTOR
The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
P–1 = 27 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5289-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
6.0
V
Emitter to Base Voltage
VEBO
2.0
V
Collector Current
IC
300
mA
Total Power Dissipation
PT
200 (CW)
mW
1.2 (duty = 1/8)Note
W
3.0 (duty = 1/24)Note
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
Note Pulse period is 10 msec or less.
2SC5289
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
PACKAGE DRAWING
(Unit: mm)
Document No. P10250EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
(1.9)
(1.8)
0.85
0.95
0.4
+0.1
–0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
2
3
1
4
2.9±0.2
0.4
+0.1
–0.05
0.4
+0.1
–0.05
T-90
0.6
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.16
+0.1
–0.06
0
to
0.1
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5291 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
| 2SC5291R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
| 2SC5291S | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
| 2SC5291S-AY | 功能描述:兩極晶體管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5291T | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
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