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參數(shù)資料
| 型號： | 2SC5273 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SC5273 |
2SC5273
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
Tj
1300
V
Collector to emitter voltage
1300
V
Emitter to base voltage
6
V
Collector current
30
mA
Collector peak current
60
mA
Collector power dissipation
1.8
W
Junction temperature
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CES
I
CEO
I
EBO
h
FE
V
CE(sat)
—
—
10
μA
V
CE
= 1300 V, R
BE
= 0
V
CE
= 1300 V, R
BE
=
∞
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 10 mA
I
C
= 10 mA, I
B
= 2 mA
Collector cutoff current
—
—
100
μA
Emitter cutoff current
—
—
10
μA
DC current transfer ratio
10
—
—
Collector to emitter saturation
voltage
—
—
5.0
V
Gain bandwidth product
f
T
Cob
—
5.5
—
MHz
V
CE
= 20 V, I
C
= 1 mA
V
CB
= 100 V, I
E
= 0, f = 1 MHz
Collector output capacitance
—
3.4
—
pF
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