- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370082 > 2SC5249 (SANKEN ELECTRIC CO LTD) Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓開關(guān)晶體管）) PDF資料下載
參數(shù)資料
| 型號： | 2SC5249 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓開關(guān)晶體管）) |
| 中文描述： | 3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SC5249 |
131
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
2S C5249
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5249
600
600
7
3(
Pulse
6)
1.5
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC5249
100
max
100
max
600
min
20to40
0.5
max
1.2
max
6
typ
50
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=600V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=0.2A
I
C
=1A, I
B
=0.2A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
C
Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0.01
0.05
0.1
0.5
1
3
0
0.5
Collector Current I
C
(A)
I
C/
I
B
=5 Const.
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
C
C
(
0
3
2
1
0
1.0
0.5
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCsTm
2CaTp
–Cse
0.01
0.1
0.05
1
3
0.5
5
50
10
200
100
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
0.1
1
0.5
3
0.2
0.5
10
5
30
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:–I
B2
=10:1:1
0.3
1
3
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
35
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
500
100
1
0.5
0.1
0.05
5
7
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=–1.0A
Duty:less than 1%
10
50
100
500
0.05
1
0.5
0.1
5
7
Collector-Emitter Voltage V
CE
(V)
C
C
(
10
μ
s
Without Heatsink
Natural Cooling
0
0
2
1
3
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
300mA
200mA
50mA
100mA
I
B
=20mA
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
200
1
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.1
t
on
(
μ
s)
1.0
max
t
stg
(
μ
s)
19
max
t
f
(
μ
s)
1.0
max
I
(A)
0.1
V
(V)
10
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5264LS | Inverter Lighting Applications |
| 2SC5265 | Inverter-controlled Lighting Applications |
| 2SC5265LS | Inverter-Controlled Lighting Applications |
| 2SC5271 | Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴散平面晶體管) |
| 2SC5274 | High-Voltage Switching Transistor(高電壓開關(guān)晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5250 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused Planar |
| 2SC5251 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused Planar |
| 2SC5252 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused Planar |
| 2SC5254 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC5254O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 40MA I(C) | SOT-23 |
發(fā)布緊急采購，3分鐘左右您將得到回復。