參數(shù)資料
型號： 2SC5241
廠商： Shindengen Electric Manufacturing Company, Ltd.
英文描述： Switching Power Transistor(5A NPN)
中文描述： 開關(guān)功率晶體管（第5A NPN）的
文件頁數(shù)： 1/12頁
文件大?。?/td> 508K
代理商： 2SC5241
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
●
Absolute Maximum Ratings
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : FTO-220
5A NPN
2SC5241
FX Series
Switching Power Transistor
Item
Symbol
Tstg
Tj
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
CP
I
B
I
BP
P
T
Vdis
TOR
Conditions
Ratings
-55
～1
50
1
50
600
450
600
7
5
1
0
2
4
30
2
0.5(0.3)
Unit
℃
℃
V
V
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
V
EB
= 5V
Emitter to Base Voltage
Collector Current DC
V
A
Collector Current Peak
Base Current DC
A
Base Current Peak
Total Transistor Dissipation
Dielectric Strength
Mounting Torque
W
kV
N
m
Terminals to case, AC
1
minute
(Recommended torque)
●
Electrical Characteristics (Tc=25
℃
)
Item
Collector to Emitter Sustaining Voltage
Symbol
V
CEO
(sus)
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
V
CE
(sat)
V
BE
(sat)
θ
jc
f
T
ton
ts
tf
Conditions
Ratings
Min 450
Max 0.
1
Max 0.
1
Max 0.
1
Min
1
0
Min 5
Max
1
.0
Max
1
.5
Max 4.
1
6
STD 20
Max 0.5
Max 2.0
Max 0.2
Unit
V
mA
I
C
= 0.
1
A
rated V
CBO
rated V
CEO
rated V
EBO
V
CE
= 5V, I
C
= 2.5A
V
CE
= 5V, I
C
=
1
mA
I
C
= 2.5A
I
B
= 0.5A
Junction to case
V
CE
=
1
0V, I
C
= 0.5A
I
C
= 2.5A
I
B
1
= 0.5A, I
B2
=
1
A
R
L
= 60
Ω
, V
BB2
= 4V
Collector Cutoff Current
Emitter Cutoff Current
mA
DC Current Gain
Collector to Emitter Saturation Voltage
V
V
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
℃
/W
MHz
μ
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5241-7000 功能描述:兩極晶體管 - BJT VCEO=450 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5241-7100 功能描述:兩極晶體管 - BJT VCEO=450 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5241-7112 功能描述:兩極晶體管 - BJT VCEO=450 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5242 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)
2SC5242_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications
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