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參數(shù)資料
| 型號(hào)： | 2SC5216 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 35K |
| 代理商： | 2SC5216 |
1
Transistor
2SC5216
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
I
Features
G
High transition frequency f
T
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
8
3
50
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Emitter cutoff current
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
Common emitter reverse transfer capacitance
Power gain
h
FE
ratio
Symbol
I
EBO
V
CBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
C
rb
PG
h
FE(RATIO)
Conditions
V
EB
= 2V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
V
CE
= 4V, I
C
= 2mA
I
C
= 20mA, I
B
= 4mA
V
CE
= 4V, I
C
= 2mA
V
CB
= 10V, I
E
= –15mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CE
= 4V, I
C
= 100
μ
A
V
CE
= 4V, I
C
= 2mA
min
15
100
0.8
0.6
14
0.6
typ
0.7
1.3
1.0
0.4
18
max
2
350
0.5
1.9
1.4
22
1.5
Unit
μ
A
V
V
V
GHz
pF
pF
dB
Marking symbol :
FB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5218 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC5219 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused Planar |
| 2SC521A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7A I(C) | TO-3 |
| 2SC522 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-37VAR |
| 2SC5223 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For high-speed switching) |
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