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參數(shù)資料
| 型號： | 2SC5195-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SC5195-T1 |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5195
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.5 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
I
C
= 100 mA
Supercompact Mini Mold Package
PACKAGE DRAWINGS
(Unit: mm)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5195
In-bulk products
(50 pcs.)
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side of
the tape.
2SC5195-T1
Taped products
(3 Kpcs/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
125
mW
J unction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
1
8
0
–
+
0
2
0
1
0
0
1
0
–
+
3
+
0
–
0
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
1.6±0.1
0.8±0.1
Document No. P10398EJ 2V0DS00 (2nd edition)
(Previous No. TD-2488)
Date Published August 1995 P
Printed in J apan
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