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參數(shù)資料
| 型號： | 2SC5195-FB-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERCOMPACT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 54K |
| 代理商： | 2SC5195-FB-A |
2SC5195
3
050
Ambient Temperature TA (°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Total
Power
Dissipation
P
T(mW)
100
150
50
100
150
0
0.5
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 1 V
Collector
Current
I
C
(mA)
1
0.01
0.1
1
10
100
0.1
1
0.2
2
20
50
5
0.5
Collector Current IC (mA)
DC
Current
Gain
h
FE
10
100
0
200
VCE = 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
0
2.5
5
7
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector
Current
I
C
(mA)
10
20
30
5
15
25
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
0
1
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
Gain
Bandwidth
Product
f
T(GHz)
7
23
5
10
20
5
10
0
1
Collector Current IC (mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
Insertion
Power
Gain
|S
21e
|2
(dB)
7
23
5
10
20
5
10
TYPICAL CHARACTERISTICS (TA = 25
°C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5195-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5195-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5195-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5195-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5197-O | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5195-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC5196 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| 2SC5196_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications |
| 2SC5196O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-247VAR |
| 2SC5196-O(Q) | 制造商:Toshiba America Electronic Components 功能描述:Tr.,NPN,80V/6A,hfe=80to160,TO-3P(N) |
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