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參數(shù)資料
| 型號： | 2SC5191-T1B |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SC5191-T1B |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5191
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN MINIMOLD
The mark
shows major revised points.
Document No. PU10523EJ01V0DS (1st edition)
(Previous No. P10395EJ2V1DS00)
Date Published August 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 1994 , 2004
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
IC = 100 mA
3-pin minimold Package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5191
50 pcs (Non reel)
2SC5191-T1B
3 kpcs/reel
8 mm wide embossed taping
Pin 3 (collector) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free air
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5191 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5191-T1B | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5191 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5191-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5191-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5191-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5192 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
| 2SC5192(NE68839) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5192-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
| 2SC5192-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
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