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參數(shù)資料
2SC5181
3
CHARACTERISTICS CURVES (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
– Ambient Temperature – °C
P
T
0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
– Base to Emitter Voltage – V
I
C
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER
V
CE
– Collector to Emitter Voltage – V
I
C
0
V
CE
= 2 V
50
30 mW
100
200
100
150
0.5
1.0
10
20
30
40
50
20
15
10
5
25
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
Passive air cooling
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
– Collector Current – mA
f
T
1
I
C
– Collector Current – mA
|
2
|
2
0
1
2
3
5
7
10
20
5
10
5
10
15
f = 2 GHz
f = 2 GHz
2
3
5
7
10
20
V
CE
= 2 V
V
CE
= 1 V
V
CE
= 2 V
V
CE
= 1 V
I
C
– Collector Current – mA
h
F
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 2 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5182 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T1 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC518383R | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5183 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5182 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5182T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB |
| 2SC5182-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5183 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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