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參數(shù)資料
| 型號(hào)： | 2SC5161TLB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CPT3, SC-63, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 2SC5161TLB |
2SC5161
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Turn-on time
Storage time
Fall time
Emitter-base breakdown voltage
Base-emitter saturation voltage
Transition frequency
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
400
7
25
10
30
10
50
1
1
VIC
=50A
IC
=1mA
IE
=50A
VCB
=400V
VEB
=5V
VCE
=5V, IC=0.1A
IC/IB
=1A/0.2A
VCE
=10V,IE=0.5A,f=5MHz
VCB
=10V, IE=0A, f=1MHz
V
A
V
MHz
pF
tON
1IC
=0.8A, RL=250
IB1
=IB2=0.08A
VCC
200V
Refer to measurement circuit diagram
s
tstg
2.5
s
tf
1
s
Typ.
Max.
Unit
Conditions
VBE(sat)
1.5
IC/IB
=1A/0.2A
V
1 Measured using pulse current
Packaging specifications and hFE
Package name
Code
Taping
Basic ordering unit
(pieces)
TL
2500
B
hFE
2SC5161
Type
hFE values are classified as follows :
Item
B
hFE
25 to 50
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
VCE
=5V
25°C
Ta
=100°C
25
°C
Fig.2 Grounded emitter output
characteristics
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
0
0.4
0.8
1.2
1.6
2.0
0246
8
1
COLLECTOR
CURRENT
:
I
C
(A)
0
Fig.3 DC current gain vs.
collector current (
Ι )
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
1000
500
200
100
50
20
10
5
2
1
5V
VCE
=10V
Ta
=25°C
IB
=10mA
20mA
40mA
60mA
80mA
120mA
180mA
Tc
=25°C
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