參數(shù)資料
型號(hào): 2SC5104
廠商: PANASONIC CORP
元件分類(lèi): 功率晶體管
英文描述: Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
中文描述: 3 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, N-G1, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 62K
代理商: 2SC5104
2
Power Transistors
2SC5104
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1)
(3)
(2)
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
6
5
4
3
2
1
T
C
=25C
400mA
300mA
200mA
100mA
50mA
I
B
=500mA
Collector to emitter voltage V
CE
(V)
C
C
0.1
1
10
100
0.3
Collector current I
C
(A)
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
–25C
25C
T
C
=100C
C
C
0.1
1
10
100
0.3
Collector current I
C
(A)
3
30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=5
T
C
=–25C
25C
125C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
1000
100
10
3
30
300
V
CE
=5V
–25C
T
C
=125C
25C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
100
10
1
0.3
3
30
V
=10V
f=1MHz
T
C
=25C
T
T
1
3
10
30
100
1
1000
100
10
3
30
300
I
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
C
o
0
4
1
3
2
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=10
(2I
B1
=–I
B2
)
V
CC
=200V
T
C
=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
10ms
300ms
t=1ms
Collector to emitter voltage V
CE
(V)
C
C
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