- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369122 > 2SC5101 (SANKEN ELECTRIC CO LTD) Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) PDF資料下載
參數(shù)資料
| 型號： | 2SC5101 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) |
| 中文描述： | 10 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PF, FM100, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 25K |
| 代理商： | 2SC5101 |
127
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1909)
2S C5101
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5101
200
140
6
10
4
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC5101
10
max
10
max
140
min
50
min
0.5
max
20
typ
250
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.5
1.0
2.0
1.5
Base Current I
B
(A)
C
C
(
I
C
=10A
5A
0
10
2
6
4
8
0
2
1
Base-Emitter Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
2 se)
–Cse
0.1
1
3
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
80
60
40
20
3.5
00
50
25
75
125
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
3
5
100
200
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
10s
1m
0.02
0.1
0.5
1
5
10
20
50
100
200
Collector Current I
C
(A)
D
F
(V
CE
=4V)
(V
CE
=4V)
Typ
0
0
2
4
6
10
8
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
150mA
200mA
100mA
75mA
50mA
20mA
10mA
300mA
I
B
=400mA
0.02
0.5
5
1
20
50
300
100
0.1
10
Collector Current I
C
(A)
D
F
125C
25C
–30C
0
–0.1
–1
–10
10
20
40
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
External Dimensions
FM100(TO3PF)
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(
)
12
I
C
(A)
5
V
(V)
–5
I
B2
(A)
–0.5
t
on
(
μ
s)
0.24typ
t
stg
(
μ
s)
4.32typ
t
f
(
μ
s)
0.40typ
I
(A)
0.5
V
(V)
10
h
FE
Rank O(50to100), P(70to140), Y(90to180)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5105 | Silicon NPN Triple Diffused Planar(三倍擴(kuò)散NPN晶體管) |
| 2SC5124 | Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開關(guān)晶體管）) |
| 2SC5130 | Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開關(guān)晶體管）) |
| 2SC5136 | Silicon NPN Epitaxial |
| 2SC5137 | Silicon NPN Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5101_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
| 2SC5103 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High speed switching transistor (60V, 5A) |
| 2SC5103_09 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High speed switching transistor (60V, 5A) |
| 2SC5103F5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252 |
| 2SC5103F5P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。