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參數(shù)資料
| 型號(hào)： | 2SC5086FT-Y |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-1B1A, TESM, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | 2SC5086FT-Y |
2SC5086FT
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086FT
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Base current
IB
40
mA
Collector current
IC
80
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 10 V, IC = 20 mA
5
7
GHz
S21e
2 (1)
VCE = 10 V, IC = 20 mA, f = 500 MHz
16.5
Insertion gain
S21e
2 (2)
VCE = 10 V, IC = 20 mA, f = 1 GHz
7.5
11
dB
NF (1)
VCE = 10 V, IC = 5 mA, f = 500 MHz
1
Noise figure
NF (2)
VCE = 10 V, IC = 5 mA, f = 1 GHz
1.1
2
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
(Note 1)
VCE = 10 V, IC = 20 mA
80
240
Output capacitance
Cob
1.0
pF
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
0.65
1.15
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
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| 2SC5086F | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5086O | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | SOT-416 |
| 2SC5086-O(T5L，F(xiàn)，T) | 制造商:Toshiba America Electronic Components 功能描述:TRANS RF NPN 12V 1MHZ SSM |
| 2SC5086-O(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
| 2SC5086-O,LF | 功能描述:TRANS RF NPN 12V 1MHZ SSM 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類(lèi)型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:7GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1dB @ 500MHz 增益:- 功率 - 最大值:100mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:80 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:80mA 安裝類(lèi)型:表面貼裝 封裝/外殼:SC-75，SOT-416 供應(yīng)商器件封裝:SSM 標(biāo)準(zhǔn)包裝:1 |
| 2SC5086Y | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | SOT-416 |
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