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參數(shù)資料
| 型號(hào)： | 2SC5060TV2M |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | 2SC5060TV2M |
2SC5060
Transistors
Power transistor (90
±
10V, 3A)
2SC5060
!
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L”
loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
!
Equivalent circuit
R
2
R
1
B
C
E
C
B
E
: Base
: Collector
: Emitter
R
1
3k
R
2
1k
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
90
±
10
90
±
10
6
1
2
1
150
55~
+
150
1
2
Unit
V
V
V
A(DC)
A(Pulse)
W
°
C
°
C
=
10ms
1 Single pulse Pw
2
.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SC5060
ATV
M
TV2
2500
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1
1
0
4
2.5
ROHM : ATV
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
Min.
80
80
1000
Typ.
Max.
100
100
10
3
2500
Unit
V
V
μ
A
mA
Conditions
V
CE(sat)
V
BE(sat)
f
T
Cob
t
on
t
stg
t
f
80
20
0.2
5
0.6
1.5
2
V
V
MHz
pF
μ
s
μ
s
μ
s
I
C
=
50
μ
A
I
C
=
1mA
V
CB
=
70V
V
EB
=
5V
V
CE
=
3V, I
C
=
0.5A
I
C
/I
B
=
500mA/1mA
I
C
/I
B
=
500mA/1mA
V
CB
=
5V, I
E
=
0.1A, f
=
30MHz
V
CE
=
10V, I
E
=
0A, f
=
1MHz
I
C
=
0.I
L
=
50
I
B1
=
=
8mA
V
CC
40V
1
2
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
1
Measured using pulse current.
2
Transition frequency of the device.
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