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參數(shù)資料
| 型號(hào)： | 2SC5015-T1KB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPER MINIMOLD PACKAGE-4 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 2SC5015-T1KB |
Data Sheet PU10403EJ01V0DS
3
2SC5015
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
15
10
25
20
5
02
6
48
IB = 20 A
80 A
60 A
40 A
100 A
120 A
140 A
160 A
180 A
200 A
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.2
0.1
15
10
220
VCE = 3 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
VCE = 1 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5015-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5016 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5018 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching) |
| 2SC5018ZD-02TL | 制造商:HITACHI 功能描述: |
| 2SC5019 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
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