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參數(shù)資料
| 型號(hào)： | 2SC5001TLR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 10000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 66K |
| 代理商： | 2SC5001TLR |
2SC5001
Transistors
Rev.A
1/2
Low VCE(sat) Transistor (Strobe flash)
(20V, 10A)
2SC5001
Features
1) Low saturation voltage, typically VCE(sat) = 0.13V at IC /
IB= 4A / 50mA.
2) High current capacity, typically IC = 10A for DC
operation and 15A for 10ms pulse.
3) Complements the 2SA1834.
Packaging specifications and hFE
Type
2SC5001
CPT3
QR
TL
2500
Package
hFE
Code
Basic ordering unit (pieces)
External dimentions (Unit : mm)
CPT3
(1)Base
(2)Collector
(3)Emitter
6.5
2.3
(2)
(3)
0.65
0.9
(1)
0.75
2.3
0.9
5.1
1.5
5.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
20
6
10
1
10
150
55 to +150
Unit
V
IB
2A
A
15
A
W
W(Tc
=25
°C)
°C
Single pulse Pw=10ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base current
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
30
20
6
0.13
150
220
1
0.25
V
A
V
MHz
pF
IC
=50A
IC
=1mA
IE
=50A
VCB
=20V
VEB
=5V
IC/IB
=4A/0.05A
VBE(sat)
0.9
1.2
V
IC/IB
=4A/0.05A
hFE1
120
390
VCE/IC
=2V/0.5A
VCE
=5V , IE= 1.5A , f=50MHz
hFE2
82
VCE
=2V , IC=4A
VCB
=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
DC current transfer ratio
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