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參數(shù)資料
| 型號： | 2SC4993 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2SC4993 |
2SC4993
6
10
5
4
3
2
1.5
1
.8
–2
–3
–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6
–.8
–1
–1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I = 1 mA)
(I = 2 mA)
1.5
10
S11 Parameter vs. Frequency
Scale: 2 / div.
60
°
0
°
30
°
90
°
120
°
150
°
180
°
–150
°
–90
°
–60
°
–30
°
–120
°
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I = 1 mA)
(I = 2 mA)
S21 Parameter vs. Frequency
Scale: 0.05 / div.
60
°
0
°
30
°
90
°
120
°
150
°
180
°
–150
°
–90
°
–60
°
–30
°
–120
°
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I = 1 mA)
(I = 2 mA)
S12 Parameter vs. Frequency
10
5
4
3
2
1.5
1
.8
–2
–3
–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6
–.8
–1
–1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I = 1 mA)
(I = 2 mA)
1.5
10
S22 Parameter vs. Frequency
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PDF描述 |
|---|---|
| 2SC4994 | Silicon NPN Epitaxial |
| 2SC4995 | Silicon NPN Epitaxial |
| 2SC4997 | High-Voltage Switching Transistor(高電壓開關(guān)晶體管) |
| 2SC4998 | High-Voltage Switching Transistor(高電壓開關(guān)晶體管) |
| 2SC5002 | Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4995YD(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5000 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5000(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC5000_04 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5001 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Vce(sat) Transistor (Strobe flash) (-20V, -10A) |
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