參數(shù)資料
型號(hào): 2SC4896
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
中文描述: 硅npn型三重?cái)U(kuò)散(三倍擴(kuò)散npn型晶體管)
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 33K
代理商: 2SC4896
2SC4896
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(surge)
P
C
*
Tj
1700
V
Collector to emitter voltage
900
V
Emitter to base voltage
6
V
Collector current
15
A
Collector surge current
20
A
Collector power dissipation
1
100
W
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= 10 mA, R
BE
=
Collector to emitter breakdown
voltage
V
(BR)CEO
900
V
Emitter to base breakdown
voltage
V
(BR)EBO
6
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CES
h
FE
V
CE(sat)
500
μA
V
CE
= 1700 V, R
BE
= 0
V
CE
= 5 V, I
C
= 1 A
I
C
= 12 A, I
B
= 3 A
DC current transfer ratio
35
Collector to emitter saturation
voltage
5
V
Base to emitter saturation
voltage
V
BE(sat)
1.5
V
I
C
= 12 A, I
B
= 3 A
Fall time
t
f
0.5
μs
I
CP
= 8 A, I
= 1.4 A
I
B2
–2.5 A, f
H
= 31.5 kHz
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